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中国电子学会半导体与集成技术专业学会和电子材料学专业学会于1981年12月12日至18日在广州联合举办了第二届全国半导体集成电路和硅材料学术会议.参加会议的论文共有263篇,其中半导体集成电路方面的双极型电路42篇,MOS电路45篇,半导体工艺59篇,工艺监控与测量33篇;硅材料方面的硅单晶质量23篇,硅材料物理性质24篇,外延生长26篇,半导体专用设备11篇.论文分开在8个小组中宣读.会议请王守武、林兰英、黄敞和王守觉四位教授分别作了大会特邀报告.
The Institute of Semiconductor and Integrated Technology of the Chinese Institute of Electronics and the Institute of Electronic Materials Technology jointly held the 2nd National Symposium on Semiconductor Integrated Circuits and Silicon Materials in Guangzhou from December 12 to December 18, 1981. There were 263 papers on the conference Including 42 bipolar circuits, 45 MOS circuits, 59 semiconductor processes, 33 semiconductor processes, 33 process monitoring and measurement, 23 silicon single crystals in terms of silicon materials and 24 physical properties of silicon materials. Growing 26, semiconductor equipment 11. The paper was read out in eight separate groups.The meeting invited Wang Showu, Lin Lanying, Huang and Wang Shoujue four professors made a special report.