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本文介绍了一种MEMS角速率传感器的设计、制作和测试.该传感器采用硅梁作为支撑和震动的结构.电磁力在驱动模式中被用来激励质量块做往复运动.驱动模式的频率被设计为5 955.38 Hz.针对另外两个轴向的角速率检测,设计检测模式的频率分别为6 151.01 Hz和6 591 Hz.质量块在驱动模式下的最大位移被设计为20μm.在器件的制作过程中使用了湿法刻蚀、电子束蒸发、阳极键合、等离子体增强化学气相沉淀(PECVD)、lift-off、感应耦合等离子体活性离子蚀刻(ICP-RIE)等MEMS工艺.质量块的尺寸是1 440μm×1 400μm×33.6μm,硅梁的设计尺寸分别为10μm×562.5μm×33.6μm,10μm×532.5μm×33.6μm,芯片的外形尺寸是3 127μm×3 069μm.为了进行器件测试,搭建了真空测试平台.测试结果表明,驱动模式下器件的谐响应频率为9 609 Hz,使用磁电检测的模式其谐响应频率为9 605 Hz.器件中电容检测需要特殊的电路,该电路目前正在搭建中.分析发现实测结果与模拟仿真结果的差异在于加工过程中产生的误差.
This article describes the design, fabrication and testing of a MEMS angular rate sensor that uses a silicon beam as a support and vibrational structure.The electromagnetic force is used to drive the mass to reciprocate in the drive mode.The frequency of the drive mode is designed For 5 955.38 Hz. For the other two axial angular rate detections, the test modes are designed to be 6 151.01 Hz and 6 591 Hz respectively. The maximum displacement of the mass in drive mode is designed to be 20 μm. During device fabrication MEMS processes such as wet etching, electron beam evaporation, anodic bonding, PECVD, lift-off, inductively coupled plasma activated ion etching (ICP-RIE), etc. The dimensions of the mass Is 1 440μm × 1 400μm × 33.6μm, the designed dimensions of the silicon beam are 10μm × 562.5μm × 33.6μm, 10μm × 532.5μm × 33.6μm, and the dimensions of the chip are 3 127μm × 3 069μm. For device testing, The test results show that the harmonic response frequency of the device under driving mode is 9 609 Hz, and the harmonic response frequency of the device using the magneto-electric detection mode is 9 605 Hz. The capacitance detection in the device requires a special circuit , The circuit is currently being built.Analysis shows that the difference between the measured results and the simulation results is the error generated in the process.