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在同一温度安瓿瓶中的不同过量组份条件下用“蒸发-冷凝-扩散”法于衬底上生长Cd_xHg_(1-x)Te外延层。研究了生长层的光和电物理性能,并根据生长层厚度研究其性能的变化。指出,在安瓿瓶中加入过量镉实际不影响外延层的性能和生长速率,而加过量碲则加速生长。看来,影响外延层生长的主要因素是HgTe源中碲的蒸发。
The Cd_xHg_ (1-x) Te epitaxial layer was grown on the substrate by evaporation-condensation-diffusion method under the condition of different excess components in the same temperature ampoule. The optical and electrical physical properties of the growth layer were studied, and the changes of its properties were studied according to the thickness of the growth layer. Pointed out that adding excessive cadmium in the ampoule does not actually affect the performance and growth rate of the epitaxial layer, while the excess amount of tellurium accelerated growth. It appears that the main factor affecting the growth of the epitaxial layer is the evaporation of tellurium from the HgTe source.