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本文首先研究了ＧａＡｌＡｓ／ＧａＡｓ多量子阱材料在不同快速热退火（ＲＴＡ）条件下的量子阱无序，然后利用该技术研制了两种具有新颖结构的半导体激光器．一种是克服端面损伤的有窗口结构的半导体激光器，实验测得最大输出光功率比无窗口结构器件平均增加约１８％．另一种是利用了无序化量子阱材料的折射率变化、具有简单横模限制结构的半导体激光器，获得了４倍阈值下仍保持基模工作的良好结果．
In this paper, we firstly investigate the quantum well disordering of GaAlAs / GaAs MQW materials under different rapid thermal annealing (RTA) conditions, and then use the technology to develop two novel semiconductor lasers. One is to overcome the damage on the end of the window structure of the semiconductor laser, the experiment measured the maximum output optical power than the average window-free devices increased by about 18%. The other is the use of disordered quantum well material refractive index changes, with a simple transverse mode confinement of the semiconductor laser, obtained 4 times the threshold of the base mode remains good work.