Point defects in the crystal lattice of SiC, known as color centers, have recently emerged as one of the most promising single-photon emitters for non-classical light sources. However, the search for the best color center that satisfies all the requirements of practical applications has only just begun. Many color centers in SiC have been recently discovered but not yet identified. Therefore, it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources. Here, we present a theoretical approach that explains the experiments on single-photon electroluminescence (SPEL) of novel color cent-ers in SiC p–i–n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them. Moreover, we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence. Unlike other methods,the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p–i–n diode.