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Low-voltage silicon(Si)-based light-emitting diode(LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor(CMOS) technology.The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration.The device size of low-voltage LED is 45.85×38.4(μm),threshold voltage is 2.2 V in common condition,and temperature is 27 ℃.The external quantum efficiency is about 10-6 at stable operating state of 5 V and 177 mA.
Low-voltage silicon (Si) -based light-emitting diode (LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor (CMOS) technology.The low-voltage LED is designed under the research of Cross-finger structure LEDs and sophisticated structure of LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85 × 38.4 (μm), threshold voltage is 2.2 V in common condition, and temperature is 27 ° C. The external quantum efficiency is about 10-6 at stable operating state of 5 V and 177 mA.