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虽然许多新的N沟道静态4K MOS随机存储器(RAM)容易被采用,但是,速度和功率之间的竞争结果仍然不很清楚。然而该存储器一个突出的优点是因为它避开了这些重要参数之间的折衷方案。同样,它的竞争者提供了小于100 ns的快速读出时间,但是需要多种电源或高功耗。另外,如互补的金属-氧化物-半导体随机存储器,功耗低(小于200 mw),但是取数时间大约需要500 ns。MK 4104是快速而又节省功耗的典型。兼有静态和动态技术的存储器,芯片的最快取数时间达到了200 ns(典型值150 ns),最快周期时间为260 ns。可是在4兆赫时有效功耗典型值只有80 mw,而维持功耗非常低,只有8 mw。
Although many new N-channel static 4K MOS random memories (RAMs) are readily available, the competition between speed and power remains poorly understood. However, one salient advantage of this memory is that it avoids the trade-off between these important parameters. Similarly, its competitors provide fast read times of less than 100 ns, but require multiple supplies or high power consumption. In addition, such as complementary metal-oxide-semiconductor random access memory, low power consumption (less than 200 mw), but taking a few days takes about 500 ns. The MK 4104 is a fast and power efficient model. Both static and dynamic memory, the fastest chip count up to 200 ns (150 ns typical), the fastest cycle time of 260 ns. However, at 4 MHz, the effective power dissipation is typically only 80 mW, while maintaining a very low power consumption of only 8 mW.