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研究了重掺硼分子束外延硅的载流子浓度对喇曼光谱线型的影响。以单声子态和准连续电子激发态之间的Ｆａｎｏ相互作用理论为基础，对实验结果进行了讨论和拟合。由拟合得到的喇曼光谱的半峰宽、峰移、峰高和不对称因子等各参数之间的关系式，结合霍耳效应测量，得到了喇曼光谱的半峰宽Г同自由载流子浓度ｐ之间的关系曲线为Ｔ＝２．５４ｐ￣０．４０８，其中Г，ｐ分别是以ｃｍ￣（－１）和１０￣１９ｃｍ￣（－３）为单位。提供了用喇曼光谱测量重掺硼分子束外延材料自由载流子浓度的测量的定标曲线。
The influence of carrier concentration of heavily boron doped molecular beam epitaxial silicon on the Raman spectral linearity was studied. Based on the theory of Fano interaction between the monomorphic states and quasi-continuous electron excited states, the experimental results are discussed and fitted. From the relationship between the half-width of the Raman spectrum fitting, the peak shift, the peak height and the asymmetry factor, we obtain the half-width of the Raman spectrum Γ with the free-load The relationship between the concentration of the fluid p curve for the T = 2.54p ~ 0.408, where Γ, p respectively cm ~ (-1) and 10 ~ 19cm ~ (-3) as a unit. A calibration curve for the measurement of free carrier concentration of heavily boron doped molecular beam epitaxy material by Raman spectroscopy is provided.