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分析了浮栅ROM器件的辐射效应机理 ,合理地解释了实验中观察到的现象 .指出辐射产生的电子空穴对在器件中形成的氧化物陷阱电荷和界面陷阱电荷是导致存储单元及其外围电路出现错误的原因 .浮栅ROM器件的中子、质子和6 0 Coγ辐射效应都是总剂量效应
The mechanism of radiation effect of floating-gate ROM device is analyzed, and the phenomenon observed in the experiment is reasonably explained.It is pointed out that the electron-hole generated by radiation generates oxide trap charge and interface trap charge in the device, The cause of the circuit error is that the neutron, proton, and 60 Co γ radiation effects of the floating-gate ROM device are both total dose effects