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To overcome short-channel effects(SCEs) in high-performance device applications,a novel structure of CNTFET with a combination of halo and linear doping structure(HL-CNTFET) has been proposed.It has been theoretically investigated by a quantum kinetic model,which is based on two-dimensional non-equilibrium Green’s functions solved self-consistently with Poisson’s equations.We have studied the effect of halo doping and linear doping structure on static and dynamical performances of HL-CNTFET.It is demonstrated that a halo doping structure can decrease the drain leakage current and improve the on/off current ratio,and that linear doping can improve high-frequency and switching performance.
To overcome short-channel effects (SCEs) in high-performance device applications, a novel structure of CNTs with a combination of halo and linear doping structure (HL-CNTFETs) has been proposed. It has been theoretically investigated by a quantum kinetic model, which is based on two-dimensional non-equilibrium Green’s functions solved self-consistently with Poisson’s equations. We have studied the effect of halo doping and linear doping structure on static and dynamical performances of HL-CNTT. It is characterized that a halo doping structure can decrease the drain leakage current and improve the on / off current ratio, and that linear doping can improve high-frequency and switching performance.