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采用p-AlxGa1-xN/i-GaN/n-GaN异质结构成功制备了含铝组分分别为0.1和0.07的正照射可见盲紫外探测器,并分别测试了它们的伏安特性曲线和光电响应光谱。对于Al组分为0.1的器件,在零偏压处出现了极低的暗电流密度,表明器件具有非常高的信噪比。高分辨率X射线衍射仪对材料的测试结果表明,高铝组分(0.1)窗口层薄膜材料的晶体质量较差,导致暗电流增大,而其窗口层的窗口选择作用则可以得到较高的响应率和较宽的响应波段。
Positive irradiation visible blind UV detectors with 0.1% and 0.07% Al-containing components were successfully prepared by using p-AlxGa1-xN / i-GaN / n-GaN heterostructure. Their voltammetric characteristics and photoelectric Response spectrum. For devices with an Al composition of 0.1, very low dark current densities at zero bias appear, indicating that the device has a very high signal-to-noise ratio. The results of high-resolution X-ray diffractometry (XRD) on the materials show that the crystal quality of the thin film material of window layer of high-aluminum component (0.1) is poor, resulting in the increase of dark current while the window selection of window layer can get higher Response rate and wide response band.