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研制出满足 Si1 - x Gex 异质结薄膜材料生长工艺的高真空化学气相外延炉。介绍了 Si1 - x Gex 异质结薄膜材料的生长工艺 ,详述了该气相外延设备的性能指标、结构组成和设计原理 ,并且给出了利用该设备生长Si1 - x Gex 异质薄膜的实验结果。
A high vacuum chemical vapor phase epitaxy furnace is developed to meet the growth of Si1 - x Gex heterojunction thin film materials. The growth process of Si1 - x Gex heterojunction thin film materials is introduced. The performance index, structural composition and design principle of the Si - xGex heterojunction thin film are introduced. The experimental results of the growth of Si1 - x Gex heterojunction thin films .