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使用了一个可控液相外延的新方法用于固体器件所用的砷化镓的生长。该方法利用在村底-熔体界面的 Peltier(热电)冷却(通过流过界面的电流产生),以便从富镓溶液中进行外延生长。在没有任何人为的使炉子冷却或加以额外的温度梯度时所观察到的这种生长是快速的,而且在电学上是可控的。该方法己用于生长几微米至150微米以上的厚外延层。己观察到稳态生长速率超过1微米/分。当碲用作n 型掺杂剂时,发现掺杂剂进入生长的外延层中是可控的。可以通过在生长时流过衬底-熔体界面的电流的突变来进行超过本底掺杂25%的掺杂。
A new method of controlled liquid-phase epitaxy was used for the growth of gallium arsenide for solid-state devices. The method utilizes Peltier (thermoelectric) cooling at the substrate-melt interface (created by the current flowing through the interface) for epitaxial growth from the gallium-rich solution. This growth observed in the absence of any artificial cooling of the furnace or with additional temperature gradients is rapid and electrically controllable. This method has been used to grow thick epitaxial layers of a few microns to over 150 microns. Steady-state growth rates have been observed to exceed 1 micron / minute. When tellurium is used as an n-type dopant, it is found that dopant is controllable into the growing epitaxial layer. Doping exceeding 25% of the background doping can be done by a sudden change in the current flowing through the substrate-melt interface at the time of growth.