据中国国防科技信息网报道,美国诺格公司研发出新的砷化镓(GaAs)E波段单片微波集成电路(MMIC)高功率放大器APH667和APH668,工作频率分别为81~86 GHz和71~76 GHz。诺格公司在2004年成为第一家提供E波段半导体器件产品的公司。诺格宇航系统微电子产品和服务部门经理Frank Kropschot称,这些新产品是诺格持续推进GaAs技术发展的证明。Frank说“客户通常将E波段的几个MMIC产品组合在一起,以取得更高输出功率。APH667和APH668将显著减少实现这些目标所需的器件数目、简 According to the report of China National Defense Science and Technology Information Network, the United States Nuoge company developed a new high-power amplifier GaAs E-band monolithic microwave integrated circuit (MMIC) APH667 and APH668 operating frequency of 81 ~ 86 GHz and 71 ~ 76 GHz. Norg Corporation became the first company to offer E-band semiconductor devices in 2004. Frank Kropschot, manager of microelectronics products and services at Nogh Space Systems, said the new products are proof that Nogh is continuing to push the boundaries of GaAs technology. Frank said ”Customers typically combine several MMIC products in the E band for higher output power, and the APH667 and APH668 will significantly reduce the number of devices needed to achieve these goals,