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对曾经推动MOS栅控型新型功率晶体管工艺发展的一些新技术作了评述。这种器件技术的优点是有很高的输入阻抗而可用低成本集成电路控制这种器件。描述了这类器件中的两种类型——功率MOSFET和MOS-双极器件——运行的物理过程。分析了加工工艺和器件额定性能的发展趋势。由于这些器件性能优越,可望在未来完全取代功率双极晶体管。
Commenting on some of the new technologies that have propelled the development of new MOS transistor-based power transistor technology. The advantage of this device technology is the high input impedance that can be achieved with low cost integrated circuits. Describes the two types of devices of this type - the power MOSFET and the MOS-bipolar device - the physical process of operation. The development trend of processing technology and device rated performance is analyzed. Due to their superior performance, these devices are expected to completely replace power bipolar transistors in the future.