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本文提出了一个调制掺杂异质结界面态模型,并首次将界面态效应引入到HEMT的二维数值模型中.本文用基于异质结漂移-扩散模型建立的 HEMT二维数值模型对常规结构的 AlGaAs/GaAs HEMT进行了模拟,讨论了 HEMT的内部工作机制,特别是异质结效应.本文着重模拟分析了HEMT中界面态对器件性能的影响。模拟结果表明界面态对HEMT的特性有显著的影响.
In this paper, we propose a modulation doping heterojunction interface state model and introduce the interface state effect into the two-dimensional numerical model of HEMT for the first time.In this paper, we use the HEMT two-dimensional numerical model based on the heterojunction drift-diffusion model to simulate the conventional structure AlGaAs / GaAs HEMT was simulated, and the internal working mechanism of HEMT, especially the heterojunction effect, was discussed.In this paper, the influence of the interface states on the performance of the device was simulated. The simulation results show that the interface states have a significant impact on the characteristics of HEMT.