七、互补型金属-氧化物-半导体电路互补电路在许多方面都同单极电路不同。较为熟悉的 P 型沟道晶体管是在 N 型硅中扩散P~+源和漏区。在互补型金属氧化物半导体电路中是以两个串联的晶体管——一个 P 型沟道,另一个 N 型沟道构成基本单元。制作互补型金属氧化物半导体器件虽然也用 N 型硅,但是除了扩散 P 型沟道晶体管的 P~+源和漏区之外,还必需为 N 型沟道晶体管扩散作为衬底的大 P Seven, complementary metal - oxide - semiconductor circuits Complementary circuits in many ways are different with the unipolar circuit. The more familiar P-channel transistors diffuse P ~ + source and drain regions in N-type silicon. In complementary metal oxide semiconductor circuits, two transistors in series - one P-type channel and the other N-type channel form the basic unit. Although N-type silicon is also used to fabricate a complementary metal oxide semiconductor device, in addition to diffusing the P ~ + source and drain regions of the P-type channel transistor, it is necessary to diffuse the large P