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The effects of a carbon implant on thermal stability of Ni0:95(Pt0:05/Si films are investigated by implanting carbon of different doses into Si substrates before silicidation with two steps of rapid thermal annealing.Compared with the Ni0:95(Pt0:05/Si films without carbon implanting, the thermal stability of Ni0:95(Pt0:05/Si films with two carbon implant doses are improved 100 ℃(1 1015 cm 2/ and 150 ℃(3 1015 cm 2/, respectively.Through sheet resistance measurement, X-ray diffraction and scanning electron microscopy, we conclude that carbon atoms precipitated at Ni(Pt0:05/Si grain boundaries and Ni0:95(Pt0:05/Si/Si interface account for the improved thermal stability of Ni0:95(Pt0:05/Si films. Furthermore, the presence of C in Ni0:95(Pt0:05/Si films changes the preferred orientation of polycrystalline Ni Si which will benefit the practical application of this material.
The effects of a carbon implant on thermal stability of Ni0: 95 (Pt0: 05 / Si films are investigated by implanting carbon of different doses into Si substrates before silicidation with two steps of rapid thermal annealing. Compared with the Ni0: 95 (Pt0: 05 / Si films without carbon implanting, the thermal stability of Ni0: 95 (Pt0: 05 / Si films with two carbon implant doses are improved at 100 ° C. (1 1015 cm 2 / and 150 ° C. (3 1015 cm 2 / respectively.Through sheet resistance measurement, X-ray diffraction and scanning electron microscopy, we conclude that carbon atoms precipitated at Ni (Pt0: 05 / Si grain boundaries and Ni0: 95 (Pt0: Si / Si interface account for improved thermal stability of Ni0 (Pt0: 05 / Si films changes the preferred orientation of polycrystalline NiSi which will benefit the practical application of this material.