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本文报道了不同衬底温度,不同生长速率和不同射频功率情况下辉光放电分解硅烷方法生长的氢化非晶与微晶硅中的氢含量和红外振动吸收光谱及其退火效应的研究结果.升高衬底温度和增大射频淀积功率都导致样品中氢总含量的下降,但就SiH_2与SiH 的相对含量而论,前者导致SiH_2相对含量的减少,而后者似乎引起相反的效果.热退火和光谱测量实验表明:不同条件下生长的非晶或微晶薄膜的热稳定性是不同的,缓慢的生长速率似乎有助于提高薄膜的热稳定性.
In this paper, the hydrogen content and infrared vibration absorption spectra of hydrogenated amorphous and microcrystalline silicon grown by glow discharge decomposition of silane under different substrate temperatures, different growth rates and different RF power have been reported. Both high substrate temperature and increasing RF deposition power lead to a decrease in the total hydrogen content in the sample, but in the case of SiH2 relative to SiH, the former results in a decrease in the relative content of SiH2 which appears to give the opposite effect. And spectroscopic measurements show that the thermal stability of amorphous or microcrystalline thin films grown under different conditions is different, slow growth rate seems to help improve the thermal stability of the film.