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采用低压金属有机气相外延设备生长并制作了 1 5 5 0 nm Al Ga In As- In P偏振无关半导体光放大器 ,有源区为 3周期的张应变量子阱结构 ,应变量为 - 0 .4 0 % .器件制作成脊型波导结构 ,并采用 7°斜腔结构以有效抑制腔面反射 .经蒸镀减反膜后 ,半导体光放大器的自发辐射功率的波动小于 0 .3d B,3d B带宽为 5 6 nm.半导体光放大器小信号增益近 2 0 d B,带宽大于 5 5 nm.在 1 5 0 0～ 1 5 90 nm波长范围内偏振灵敏度小于 0 .8d B,峰值增益波长的饱和输出功率达7.2 d Bm.
The low-pressure metal organic vapor phase epitaxy equipment is used to grow and fabricate a 1550 nm AlGaIn As-In P polarization-independent semiconductor optical amplifier. The active region is a three-cycle tensile strain quantum well structure with a strain of -0.04 %. The device fabricated into a ridge waveguide structure, and the use of 7 ° oblique cavity structure to effectively suppress the cavity surface reflection. After evaporation antireflection film, the semiconductor optical amplifier spontaneous emission power fluctuations less than 0.3d B, 3d B bandwidth Is 5 6 nm. The semiconductor optical amplifier has a small signal gain of nearly 20 dB and a bandwidth of more than 55 nm. The polarization sensitivity is less than 0.8 dB at a wavelength range of 150 to 1505 nm. The saturated output of the peak gain wavelength Power up to 7.2 d Bm.