采用无籽晶物理气相传输(PVT)方法生长出ZnTe晶体。实验开始,温差较大,压强相对较低,造成晶体生长速率过快,从而以各成核点为中心进行岛状生长,形成了结构密集的ZnTe多晶结构。实验过程中,通过调整原料区与生长区温差和压强等工艺条件进行一系列籽晶扩大实验。发现适当缩小温差、增加生长压强有益于籽晶横向扩展。当温差缩小到35℃,压强增加到230 mbar(1 mbar=102 Pa),生长出了直径45 mm、厚度8 mm的ZnTe单晶。观察发现,晶体表面存在明显的孪晶线,孪晶线产生原因为生长前籽晶边缘有破损,导致生长过程突变。取其较大的单晶进行XRD测试,结果显示该ZnTe单晶具有良好的〈111〉晶向和结晶质量。 ZnTe crystals were grown using seedless physical vapor transport (PVT) method. At the beginning of the experiment, the temperature difference was relatively large and the pressure was relatively low, which led to the growth rate of crystal being too fast. As a result, island-like growth took place at each nucleation site to form a structure-rich ZnTe polycrystal structure. During the experiment, a series of experiments of seed expansion were carried out by adjusting process conditions such as temperature difference and pressure of raw material zone and growth zone. It is found that proper reduction of temperature difference and increase of growth pressure are beneficial to lateral expansion of seed. When the temperature difference was reduced to 35 ° C and the pressure was increased to 230 mbar (1 mbar = 102 Pa), a ZnTe single crystal with a diameter of 45 mm and a thickness of 8 mm was grown. The observation shows that there are obvious twin lines on the surface of the crystal, and the twins line is caused by the breakage of the edge of the seed before growth, resulting in the mutation of the growth process. The larger single crystal was taken for XRD test. The results show that the ZnTe single crystal has good <111> crystal orientation and crystal quality.