为了克服铝金属化在硅器件和集成电路使用中共同存在的固有缺点,已提出采用铝合金的建议。对于铝—硅,在高温时硅溶解入金属化中,故能阻止结的退化。一定量的金属掺入铝中,特别是铜的掺入能起增加电迁移阻抗的效果。在高温处理的情况下,由于合金材料的重新分布使铝—铜合金在各种成分金属化中成为一种较好的系统,在高温时可限制小丘的生长。为了使每种掺入成分同时产生有益作用,有人 In order to overcome the inherent shortcomings of aluminum metallization in the common use of silicon devices and integrated circuits, proposals have been made for using aluminum alloys. For aluminum-silicon, silicon dissolves into the metallization at high temperatures, so it is possible to prevent the junction from degeneration. The incorporation of a certain amount of metal into aluminum, particularly copper, can increase the effect of electromigration resistance. In the case of high temperature processing, the aluminum-copper alloy becomes a better system for metallization of various components due to the redistribution of the alloy materials, limiting the growth of the hillocks at high temperatures. In order for each ingredient to be incorporated to produce a beneficial effect, somebody