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通过对阻挡层CMP后布线片各个单元的电学参数的检测,研究了阻挡层CMP后产生的铜损失问题。通过探索规律性实验研究了螯合剂和表面活性剂对铜和钽的去除速率的影响规律,得到铜的去除速率与阻挡层材料(Ta)去除速率随螯合剂与表面活性剂含量变化的规律,铜的去除速率以及铜与阻挡层材料去除速率比都达到要求。抛光液中的螯合剂能够快速与金属离子反应生成螯合物,从而达到去除铜膜和阻挡层的目的。将符合要求的抛光液运用到铜布线片上进行阻挡层CMP,得到良好的效果,铜损失得到了有效控制。在铜布线片上测得的铜线条电阻和漏电流数值可以很直观地反映出抛光液对器件性能的影响,所以主要以测得的铜线条电阻和漏电流作为参考标准进行研究。
The copper loss caused by the barrier CMP was studied by measuring the electrical parameters of the various elements of the wiring board after CMP. The effects of chelating agent and surfactant on the removal rate of copper and tantalum were studied by regular experiments. The removal rate of copper and the removal rate of barrier material (Ta) with the content of chelating agent and surfactant were obtained. Copper removal rates and copper and barrier material removal rates are met. The chelating agent in the polishing solution can rapidly react with the metal ions to form the chelate, thereby achieving the purpose of removing the copper film and the barrier layer. Applying the polishing solution that meets the requirements to the copper wiring layer for barrier CMP results in good results and effective copper loss control. The measured values of the copper line resistance and the leakage current on the copper wiring sheet can very directly reflect the influence of the polishing liquid on the performance of the device. Therefore, the copper wire resistance and the leakage current measured are mainly used as the reference standards.