论文部分内容阅读
对带有ｐ型转向器的ＭＯＳ双门极ＥＳＴ晶闸管（ＤＧＥＳＴＤ）进行了研究。该ｐ型转向器（ｄｉｖｅｒｔｅｒ）与双门极的结合使得空穴电流分流，从而明显改善了传统ＥＳＴ的正向偏置安全工作区（ＦＢＳＯＡ），提高了其开关能力。用ＴＭＡＭＥＤＩＣＩ商用器件模拟软件对ＤＧＥＳＴＤ特性进行了模拟验证。
The MOS double-gate EST thyristor (DGESTD) with p-type redirector was investigated. The combination of the diverter and the double gate allows the hole current to shunt, thereby significantly improving the forward biased safe operating region (FBSOA) of the conventional EST and improving its switching capability. The simulation of DGESTD features was performed using TMAMEDICI commercial device simulation software.