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介绍一种双异质结InGaAsP/InP双极晶体管,它包括一层用溅射淀积制备的作宽禁带发射区的CdO膜。电流增益已高达40。用CdO层作集电区时,晶体管还能以相反方式工作。该管的主要特点是在结构方面与可作单片集成的1.5μmDH激光器相容。
A double heterostructure InGaAsP / InP bipolar transistor is described which includes a CdO film deposited by sputtering deposition as a wide bandgap emitter. Current gain has reached 40. With the CdO layer for the collector region, the transistor can also work in the opposite way. The main feature of this tube is its structural compatibility with a 1.5μmDH laser that can be monolithically integrated.