一 MOS场效应四极管的特性图1是一个在P型Si衬底上制造的Al栅n沟道MOS场效应四极管的截面图。两个n~+扩散区分别作为源、漏接触电极。中间n~-扩散区用来连接两个沟道,相当于一沟道的漏极,二沟道的源极。在一般电路中,源极接地,漏极接电源,信号由一栅输入,二栅作为自动增益控制电极。这样,随漏压V和两个栅压V_(G1)、V_(G2)的不同,MOS场效应管有四种不同的工作状态。如果用“S”和“L”分别表示沟道工作在饱和区及线性区,用“1”和“2”分别表示一沟和二沟道,那么,四种工作状态可表示为 Characteristics of a MOS Field Effect Transistor Figure 1 is a cross-sectional view of an Al gate n-channel MOS field effect quadruode fabricated on a p-type Si substrate. Two n ~ + diffusion region as the source, drain contact electrode. The middle n ~ - diffusion area is used to connect two channels, which is equivalent to the drain of one channel and the source of two channels. In the general circuit, the source is grounded, the drain is connected to the power supply, the signal is input by a gate, and the second gate is used as an automatic gain control electrode. In this way, with the drain voltage V and the two gate voltage V_ (G1), V_ (G2) of the different, MOS FET has four different operating conditions. If “S” and “L” are used to indicate that the channel operates in the saturation region and the linear region respectively, and “1” and “2” denote one trench and two trenches respectively, then the four working states can be expressed as