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EM 模型是由 Ebers 和 Moll 两人于1954年根据器件物理特性所建立的双极型晶体管非线性模型,以后经过许多人的不断改进,已成为目前最常用的晶体管模型。EM_(?)模型是模拟双极型晶体管的第三级复杂程度的非线性模型。它是在 EM_2模型的基础上对直流特性、电荷储存效应以及温度特性等方面进行了二级修正后改进的模型。它包括了诸如基区宽度调制效应、共发射极电流增益β和正向传输时间τ_F 随电流的变化,更符合实际地表示了分布性的集电结电容,以及器件参数随温度的变化等各种二阶效应。本文主要介绍 EM_3模型中表示基区宽度调制效应的参数欧莱(Early)电压 V_A 的定义和测量原理,
EM model is a bipolar transistor nonlinear model established by Ebers and Moll in 1954 according to the physical characteristics of the device. After many people’s continuous improvement, the EM model has become the most commonly used transistor model. The EM_ (?) Model is a nonlinear model that models the third level of complexity of bipolar transistors. It is based on the EM_2 model of the DC characteristics of the charge storage effect and temperature characteristics of the second-level correction and improvement of the model. It includes, for example, base width modulation effects, common emitter current gain β and forward transfer time τ_F with current variations, more realistic representation of distributed collector junction capacitance, and variations in device parameters with temperature Second order effect. This article mainly introduces the definition and measurement principle of the early voltage V_A, which is the parameter of the width modulation effect in the EM_3 model,