论文部分内容阅读
硅红外探测器阵列常由肖特基势垒探测器单元组成,这些单元通过转移栅和常规电荷耦合器件(CCD)的移位寄存器相连接。描述的新型器件结构是把探测功能和移位寄存器功能合并入一个肖特基单元,其优点是大大增加了探测器占空系数,及在给定尺寸的芯片上构成更大型探测器阵列的可能性。
Silicon infrared detector arrays are often composed of Schottky barrier detector cells which are connected by a transfer gate to a shift register of a conventional charge-coupled device (CCD). The new device architecture described incorporates the probing and shift register functions into a Schottky cell with the advantage of greatly increasing the detector duty cycle and the possibility of forming a larger detector array on a chip of a given size Sex.