论文部分内容阅读
采用溶剂热法将Ni掺杂到纳米SnO2中,分别利用TEM、EDAX、XRD、Raman和XPS表征了Ni掺杂后SnO2的微观形貌、结构和元素组成特征,分析了Ni掺杂对增强SnO2气敏性能的作用机理。实验结果表明,Ni的掺杂可抑制SnO2晶粒增长,减小SnO2晶粒尺寸,进而提升传感器的气敏性能。少量的Ni掺杂能够使Ni2+进入SnO2晶格中取代Sn4+产生氧空位,促进SnO2气敏性能的提高;而当Ni掺杂量达到30%时,会导致部分Ni以其他的形式存在于SnO2晶体表面上,降低SnO2气敏性能。
The solvothermal method was used to doping Ni into SnO2. The morphology, structure and elemental composition of SnO2 after Ni doping were characterized by TEM, EDAX, XRD, Raman and XPS respectively. The effects of Ni doping on SnO2 Gas sensing mechanism of action. The experimental results show that Ni doping can suppress the growth of SnO2 grains, decrease the grain size of SnO2 and improve the gas sensing performance of the sensor. A small amount of Ni doping can make Ni2 + into the lattice of SnO2 instead of Sn4 + to generate oxygen vacancies and promote the gas sensing performance of SnO2. When Ni doping amount reaches 30%, some Ni will exist in other forms in the SnO2 crystal On the surface, reduce SnO2 gas sensitivity.