论文部分内容阅读
采用金属有机化学汽相淀积工艺和脊型波导结构，实现了1．31μmAlGaInAs／InP应变多量子阱分布反馈激光器高功率输出。在25℃时，管芯最大输出功率超过50mW，阈值电流范围在13～20mA之间，发光面斜效率高于0．45mW／mA，边模抑制比超过35dB，室温中值寿命大于3×10~5小时。
The metal-organic chemical vapor deposition process and the ridge waveguide structure are adopted to realize the high-power output of a 1.31 μm AlGaInAs / InP strain multiple quantum well distributed feedback laser. At 25 ℃, the maximum output power of the die exceeds 50mW, the threshold current ranges from 13mA to 20mA, the inclined plane efficiency of the light emitting surface is higher than 0.45mW / mA, the side mode suppression ratio exceeds 35dB, and the median temperature life of the die is greater than 3 × 10 ~ 5 hours.