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采用40kHz中频脉冲电源,利用电容耦合等离子体增强化学气相沉积(PECVD)技术,以六甲基二硅氧烷(HMDSO)为单体、氧气为反应气体,氩气为辅助气体,在PET薄膜表面沉积应用于透明高阻隔包装的氧化硅薄膜,并对其进行研究。在薄膜的制备过程中,为了了解氧化硅的形成机理,通过四极杆质谱仪对等离子体放电的气相中间产物及活性粒子进行原位检测;而通过傅立叶变换红外光谱仪(FTIR)及原子力显微镜(AFM)对沉积薄膜进行化学组成及表面形貌分析表征,探讨沉积过程中等离子体气相粒子的产生和反应对薄膜特性的影响。
Using 40kHz IF pulse power supply, the use of capacitively coupled plasma enhanced chemical vapor deposition (PECVD) technology to hexamethyldisiloxane (HMDSO) as a monomer, oxygen as a reaction gas, argon as an auxiliary gas, the surface of the PET film The deposition is applied to the transparent and high-barrier silicon oxide film, and its research is carried out. In order to understand the mechanism of formation of silicon oxide, the gas phase intermediate products and active particles of plasma discharge were detected in situ by a quadrupole mass spectrometer. In the process of thin film formation, Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy AFM) were used to characterize the chemical composition and surface morphology of the deposited films. The influence of the formation and reaction of the plasma phase particles on the film properties was discussed.