The performance of an InGaN/GaN multiple quantum well (MQW) based visible-light Schottky photodiode (PD) is improved by optimizing the source flow of TEGa during InGaN Qw growth.The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition.From the fabricated Schottky-barrier PDs,it is found that the smaller the TEGa flow,the lower the reverse-bias leakage is.The photocurrent can also be enhanced by depositing the InGaN QWs with using lower TEGa flow.A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow.Analysis results show that the lower TEGa flow used for depositing InGaN may lead to superior crystalline quality with improved InGaN/GaN interface,and less structural defects related non-radiative recombination centers formed in the MQWs.