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用改进的垂直气相法生长的富镉 Cd Se单晶 ,其电阻率为 10 7Ω· cm量级 ,电子陷阱浓度为 10 8cm- 3量级 ,且能将注入其中的部分电荷储存起来。分析认为 ,晶体的高电阻率及储存电荷的能力都是由 Se空位引起的 .
The cadmium-rich CdSe single crystal grown by a modified vertical vapor phase method has a resistivity of the order of 10 7 Ω · cm and an electron trap concentration of the order of 10 8 cm -3, and can store part of the charge injected into it. Analysis, the high resistivity of the crystal and the ability to store charges are caused by Se vacancies.