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An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones obtained by using the capacitance-voltage (C-V) curve integration and the plot of dV/d(ln I) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.
An Ni / Au Schottky contact on an AlGaN / GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN / GaN diode are regularly extracted from the conductance-voltage (GV) curve and found to be in good agreement with the first won by using the capacitance-voltage (CV) curve integration and the plot of dV / d (In I) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN / GaN Schottky diode developed.