在1～1.65μm波长范围内工作的光波通讯系统,需要高速、低噪声的InGaAs光电探测器。与在相同波长范围工作的雪崩光电二极管相比,p-i-n光电二极管具有暗电流低、频率带宽大等优点。最近美国贝尔实验室针对光波通讯的需要,已研制成具有上述优点的p-i-n光电二极管。这是一种平面的、Zn扩散的InP/InGaAs Lightwave communication systems operating in the wavelength range of 1 to 1.65 μm require high-speed, low-noise InGaAs photodetectors. Compared with avalanche photodiodes operating in the same wavelength range, p-i-n photodiodes have the advantages of low dark current and large frequency bandwidth. Recently, Bell Laboratories in the United States aimed at the need of lightwave communication and developed the p-i-n photodiode with the above advantages. This is a planar, Zn-diffused InP / InGaAs