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The Si epitaxial films are grown on Si (100) substrates using pure Si 2 H 6 as a gas source using ultrahigh vacuum chemical vapour deposition technology.The values of growth temperature T g are 650℃,700℃,730℃,750℃,and 800℃.Growth mode changes from island mode to step-flow mode with T g increasing from 650℃ to 700℃.Rippled surface morphologies are observed at T g=700℃,730℃,and 800℃,but disappear when T g=750℃.A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth.
The Si epitaxial films are grown on Si (100) substrates using pure Si 2 H 6 as a gas source using ultrahigh vacuum chemical vapor deposition technology. The values of growth temperature T g are 650 ° C, 700 ° C, 730 ° C, 750 ° C, and 800 ° C. Growth mode changes from island mode to step-flow mode with T g increasing from 650 ° C. to 700 ° C. Rippled surface morphologies are observed at T g = 700 ° C., 730 ° C., and 800 ° C., but disappear when T g = 750 ° C. A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth.