本文从理论上分析了利用SiO_2/Si 界面电荷造成Si表面耗尽和反型的性质,制成紫外光响应灵敏的表面型硅光电探测器的可行性,并在实验上加以证实.利用这种方法研制成功的光电探测器具有如下特性:7,000A 附近的响应灵敏度为 0.57A/W、3,300至 10,300A 范围内的相对响应大于20％、暗电流为0.35nA、反向击穿电压为140V以及响应时间为10~(-7)s. In this paper, we analyze the feasibility of making the surface silicon photodetector sensitive to UV light by using the SiO_2 / Si interfacial charge caused by the depletion and inversion of Si surface in theory, and prove it experimentally. Method Developed photodetectors have the following characteristics: response sensitivity around 7,000 A at 0.57 A / W, relative response over 20% at 3,300 to 10,300 A, dark current of 0.35 nA, reverse breakdown voltage of 140 V and Response time is 10 ~ (-7) s.