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High efficiency Al|free InGaAs/InGaAsP/InGaP lasers emitting at 980nm are fabricated by MOCVD. The lasers exhibit a high internal quantum efficiency of 95% and a low internal loss of 1^8 cm+{-1}. Low threshold current density of 190A/cm+2 and high slope efficiency of 1^06W/A are obtained by lasers with 800μm cavitylength. A high characteristic temperature 210℃ is also obtained by replacing the GaAs barrier with high|bandgap InGaAsP barrier. The measured vertical and parallel divergence angle are 40° and 8°, respectively.
High efficiency Al | InGaAs / InGaAsP / InGaP lasers emitting at 980 nm are fabricated by MOCVD. The lasers exhibit a high internal quantum efficiency of 95% and a low internal loss of 1 ^ 8 cm + { -1 }. Low threshold current density of 190 A / cm + 2 and high slope efficiency of 1 ^ 06W / A are obtained by lasers with 800 μm cavity length. A high characteristic temperature 210 ° C is also obtained by replacing the GaAs barrier with high | bandgap InGaAsP barrier. The measured vertical and parallel divergence angles are 40 ° and 8 °, respectively.