论文部分内容阅读
提出了一种新型结构的SiC结型场效应晶体管,采用肖特基接触替代P+型栅区,以降低SiC JFET的工艺复杂度,并提高器件的功率特性。建立了器件的数值模型,对不同材料和结构参数下的功率特性进行了仿真。结果表明,与PN结栅相比,肖特基栅结构可以有效降低SiC JFET的开态电阻;与常规结构的双极模式SiC JFET相比,在SiC肖特基栅JFET的栅极正偏注入载流子,同样可以有效降低器件的开态电阻,折中器件的正反向特性,但不会延长开关时间。
A new type of SiC junction field effect transistor is proposed, which adopts Schottky contact instead of P + gate region to reduce the process complexity of SiC JFET and improve the power characteristics of the device. The numerical model of the device is established, and the power characteristics under different material and structure parameters are simulated. The results show that the Schottky gate structure can effectively reduce the on-resistance of the SiC JFET compared with the PN junction gate. Compared with the bipolar mode SiC JFET of the conventional structure, the gate forward bias of the SiC Schottky gate JFET Carrier, also can effectively reduce the device’s on-state resistance, compromise the positive and negative characteristics of the device, but will not extend the switching time.