本文用全自动化x射线衍射仪给出了As~+注入Si的x射线衍射峰分布。用Levenberg-Marguarat法模拟实验曲线,根据x射线衍射的运动学理论,在试探应变函数和多层模型的基础上,通过自编程序计算给出了As~+注入Si后晶格变随注入深度、注入剂量和退火温度的变化。同时,测量了As~+注入Si后在不同温度下的扩展电阻,将扩展电阻换算成电阻率。结果表明,离子注入引起晶体微观结构的变化——晶格应变与晶体宏观电学性质——电阻率的变化基本上一致。 In this paper, the x-ray diffraction peak distribution of As ~ + implanted Si is given by a fully automated x-ray diffractometer. Based on the kinematic theory of x-ray diffraction, based on the heuristic strain function and multi-layer model, the experimental data of Levenberg-Marguarat method are given and calculated by self-programmed program. , Injection dose and change of annealing temperature. At the same time, the extended resistance of As ~ + implanted Si at different temperatures was measured, and the extended resistance was converted into resistivity. The results show that the ion-induced changes in the crystal microstructure - lattice strain and crystal macroscopic electrical properties - the change of resistivity is basically the same.