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讨论应变层异质结价带偏移的剪裁、设计方法，研究Ｓｉ／Ｇｅ应变层异质结价带偏移设计参数与应变条件的关系，基于异质结中平均键能“对齐”，得到适用于Ｓｉ／Ｇｅ异质结价带偏移剪裁与设计的计算公式和图表。
This paper discusses the tailoring and design method of the band offset of the heterojunction strained layer, and studies the relationship between the design parameters of the valence band offset of the heterojunction in Si / Ge strained layer and the strain conditions. Based on the alignment of the average bond energy in the heterojunction, Calculated formulas and charts for Si / Ge heterostructure valence band offsets and designs.