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根据离化簇团束的基本性质与原理，运用反应离化簇团束技术在低衬底温度下制备了氮化镓薄膜．透射电子显微镜和扫描电子显微镜测定出该薄膜为多晶薄膜．Ｘ射线光电子能谱（ＸＰＳ）测定结果表明，已经形成了Ｇａ—Ｎ 化学键，氮、镓原子比接近１∶１，说明反应气体离化簇团技术是一条在较低温度下制备氮化镓薄膜的可行的技术途径．薄膜中含有少量氧化镓，通过多组数据的比较发现，增加氮气的离化率有助于减少薄膜中的氧含量．
According to the basic nature and principle of the ionized cluster beam, a GaN film was prepared at low substrate temperature by reactive ionization cluster beam technique. The films were determined to be polycrystalline films by transmission electron microscopy and scanning electron microscopy. X-ray photoelectron spectroscopy (XPS) measurement results show that the formation of Ga-N chemical bonds, nitrogen, gallium atomic ratio close to 1, indicating that the reactive gas ionization cluster technology is a lower temperature for the preparation of gallium nitride film Feasible technical way. The film contains a small amount of gallium oxide, through the comparison of multiple sets of data found that increasing the nitrogen ionization rate helps reduce the oxygen content in the film.