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蒸涂法获得的Si-Ni界面在室温到800℃下热处理,并用透射式电子显微镜对它进行原位研究。在化学清洗的洁净的Si(100)及(111)面上生成了Ni_2Si,NiSi和NiSi_2系列。实验表明,在真空度为1×10~(-6)mmHg,温度为650℃时,化学清洗的Si表面上生成了SiC;各种镍硅化物的出现不是在某一确定温度;在Si(111)面上外延生长镍硅化物比在(100)面上容易。
The Si-Ni interface obtained by the evaporation method was heat-treated at room temperature to 800 ° C. and investigated in situ using a transmission electron microscope. Ni2Si, NiSi and NiSi2 series have been formed on chemically cleaned Si (100) and (111) surfaces. Experiments show that at a vacuum of 1 × 10 -6 mmHg and a temperature of 650 ℃, SiC is chemically formed on the Si surface. The occurrence of various nickel silicides is not at a certain temperature. In the case of Si ( Epitaxial growth of nickel silicide is easier than on the (100) plane.