在LPCVD理论模型基础上,通过引进“电子温度”,对 PECVD多晶硅膜进行了计算机模拟分析.结果表明,射频功率和反应室气压是影响PECVD淀积速率分布的两个主要因素,且两者受p=kW线性关系的制约,即对于一定的射频功率,总可选择一合适的反应室气压,使淀积速率分布最佳.实验结果与理论分析相吻合. Based on the theoretical model of LPCVD, a computer simulation of PECVD polysilicon film was carried out by introducing “electron temperature.” The results show that RF power and chamber pressure are the two main factors affecting the PECVD deposition rate distribution, and both are affected by p = kW linear constraints, that is, for a certain RF power, always choose a suitable reaction chamber pressure, the deposition rate of the best distribution.The experimental results are consistent with the theoretical analysis.