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对6H-SiC衬底上热氧化生长的SiO2层进行了不同温度退火后的高温漏电流研究。根据SiO2层红外反射特征光谱的变化,研究了SiO2结构变化对高温I-V特性影响的机理。研究认为,可以通过低温高温两步退火工艺改善6H-SiC衬底上热氧化生长SiO2层的质量。
The high-temperature leakage current after annealing at different temperatures was investigated on thermally grown SiO2 layer on 6H-SiC substrate. According to the change of characteristic spectrum of infrared reflection of SiO2 layer, the mechanism of the effect of SiO2 structure on I-V characteristic at high temperature was studied. It is considered that the quality of thermally grown SiO 2 layer on 6H-SiC substrate can be improved by two-step annealing at low temperature and high temperature.