论文部分内容阅读
本文提出用电流脉冲法在Ｓｉ（１１１）－７×７表面进行单原子操纵，用恒电流扫描的方法在Ｓｉ（１１１）－７×７表面形成纳米级沟槽结构．通过分析Ｓｉ（１１１）－７×７表面的原子结构模型指出，当线扫描的方向平行于Ｓｉ（１１１）－７×７表面的基矢方向，并且原子操纵后形成的沟槽的边界处于基矢方向上原子空位的连线时，所得到的沟槽才具有原子级平直的边界．这是在Ｓｉ（１１１）－７×７表面可能得到的最稳定的人造原子级结构，并在实验中实现了这种结构．本文对原子操纵的机理也进行了分析．
In this paper, single-atom manipulation is performed on the Si (111) -7 × 7 surface by current pulse method, and a nanosize trench structure is formed on the Si (111) -7 × 7 surface by the constant current scanning. By analyzing the atomic structure model of the Si (111) -7 × 7 surface, it is pointed out that when the direction of line scanning is parallel to the direction of the base vector of the Si (111) -7 × 7 surface, and the boundary of the groove formed by atom manipulation is in the base In the sagittal direction of the connection of atomic vacancies, the resulting trench has an atomically flat boundary. This is the most stable man-made atomic structure possible on the surface of Si (111) -7 × 7, and this structure has been achieved experimentally. This article also analyzes the mechanism of atomic manipulation.