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本文就双异质结激光器和双异质结发光二极管的三种焊料(In、InSn、Ausn)对其器件的串联电阻(Rs)、热阻(RT)的影响作了初步的探索研究。从实验结果获得AuSn焊料所焊接的器件的串联电阻最低可降到0.25Ω·cm,一般平均值都在0.4Ω·cm左右,比Insn合金焊料所焊接的器件的串联电阻约低13.3%,比纯In所焊接的器件的串联电阻约低60%左右。而Insn的热阻约为46℃/w,比纯In焊料所焊接的器件的热阻约低三分之一。从降低半导体光电器件的串联电阻和热阻的大小以及器件的热稳定性和可靠性观点出发,预示AuSn合金材料将是一种有前途的GaAs光电器件的键合材料。另外,本文分析影响半导体光电器件的串联电阻和热阻的主要因素是:在进行键合时,环境气氛、焊接温度高低,时间长短以及键合材料的选择等有关。其次就是器件在键合过程中,由于工作条件不完善(如未进行氮气保护或不是在真空中焊接)而引起焊料的氧化以及形成金属间化合物等问题,只要妥善地解决了以上两个问题,对于半导体光电器件的焊接来说,将会得到理想的高可靠性的器件。
In this paper, the effects of three kinds of solders (In, InSn, Ausn) on the series resistance (Rs) and the thermal resistance (RT) of double heterostructure laser and double heterostructure LED are explored. From the experimental results AuSn solder soldered device series resistance as low as 0.25Ω · cm, the average is about 0.4Ω · cm, lower than the series resistance of Insn alloy solder soldered device series resistance of about 13.3% lower than Pure In soldered device series resistance is about 60% lower. The thermal resistance of the Insn is about 46 ° C / w, about one-third lower than the thermal resistance of devices soldered with pure In solder. From the viewpoint of reducing the series resistance and the thermal resistance of the semiconductor optoelectronic device and the thermal stability and reliability of the device, it is predicted that the AuSn alloy material will be a promising bonding material for GaAs optoelectronic devices. In addition, the main factors that affect the series resistance and thermal resistance of semiconductor optoelectronic devices in this paper are: the environmental atmosphere, the welding temperature, the length of time, the choice of bonding materials and so on. The second is the device in the bonding process, due to imperfect working conditions (such as no nitrogen or not in vacuum welding) caused by the oxidation of solder and the formation of intermetallic compounds and other issues, as long as the proper solution to these two issues, For the welding of semiconductor optoelectronic devices, will be the ideal high reliability of the device.