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本文比较详细地叙述了GaAlAs/GaAs宽禁带发射极异质结微波双极型晶体管的设计原理、制作工艺和实验结果。在叙述原理时着重于与Si微波功率管的对比,并将实验结果和理论值进行了对比和分析,指出了进一步改进高频性能的途径。已经得到的初步实验结果为:击穿电压BV_(ceo)=80V,l_(cmax)=200mA(发射结面积为A_B=2×10~(-4)cm~2),电流增益h(fe)=20～300,最大振荡频率f_(max)=1.2GHz,特征频率f_T=2.0GHz(V_(ce)=20V,I_c=20mA),实测到的温度-电流增益h_(fe)曲线说明晶体管的工作温度可高达350℃。
This paper describes in detail the design principle, fabrication process and experimental results of GaAlAs / GaAs wide band gap emitter heterojunction microwave bipolar transistor. In describing the principle, the emphasis is placed on the comparison with the Si microwave power tube. The experimental results and theoretical values are compared and analyzed, and the ways to further improve the high frequency performance are pointed out. The initial experimental results have been obtained: the breakdown voltage BV ceo = 80V, l cmax = 200mA (emitter area A_B = 2 × 10 -4 cm 2), the current gain h (fe) = 20-300, the maximum oscillation frequency f max = 1.2GHz, the characteristic frequency f_T = 2.0GHz (V ce = 20V, I_c = 20mA), the measured temperature-current gain h_ (fe) Operating temperature up to 350 ℃.