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本文推导了一种可简便、准确、直观计算和分析pn结Ⅰ-Ⅴ特性的公式和方法,并应用该方法对两类典型HgCdTe环孔pn结的Ⅰ-Ⅴ、R_D-V特性进行了计算和拟合;得到了表面欧姆(反型沟道)漏电导、二极管理想因子n随电压的分布等反映二极管结特性的重要参数。计算结果表明,对于长波HgCdTe光伏器件而言,表面漏电流在整个暗电流中所占的比重相当大,表面漏电流严重地制约着器件性能。HgCdTe材料的晶体缺陷会使二极管的理想因子n增大,从而使产生-复合电流及陷阱辅助隧穿电流增加。
In this paper, a formula and method to calculate and analyze the Ⅰ-Ⅴ characteristics of pn junction can be easily, accurately and intuitively calculated, and I-Ⅴ and R_D-V characteristics of two types of typical HgCdTe ring pn junctions have been calculated by this method And fitting. The important parameters that reflect the diode junction characteristics, such as the surface ohmic (inverse channel) leakage conductance and the diode ideality factor n with the voltage distribution, are obtained. The calculated results show that for the long-wave HgCdTe photovoltaic devices, the surface leakage current accounts for a large proportion of the total dark current, and the surface leakage current severely restricts the device performance. The crystal defects of HgCdTe material will increase the ideal factor n of the diode, so that the generation-recombination current and trap-assisted tunneling current increase.