2D SnS_2 nanosheets are exfoliated by micromechanical exfoliation technique from SnS_2 single crystals which are synthesized by CVT methods.Monolayer SnS_2 nanosheet has been obtained and the Raman spectrum shows that A_(1g) mode of monolayer SnS_2 shows a slight softening compared with bulk SnS_2 single crystal.The field effect transistors(FETs) based on multilayer SnS_2 nanosheets have been fabricated,of which the electrical and photoelectrical properties have been measured.Under dark condition,with V_(sd) of 1 V,our SnS_2 FET shows n-type behavior.The carrier mobility of the FETs reach 3.51 cm~2V~(-1)s~(-1) and the ‘ON/OFF’ ratio is about 5×10~2.The SnS_2 FET is also illuminated under 532 nm laser with the power of 500 m W/cm~2.The light absorption causes an increment of carrier mobility(from 3.51 cm~2V~(-1)s~(-1) under dark condition to 3.85 cm~2V~(-1)s~(-1) under 532 nm laser illumination with the power of 500 m W/cm~2/ of SnS_2.The responsivity(R) and detectivity of our multilayer device under 500 m W/cm~2532 nm is 2.08 A/W and 6×10~6 J,respectively.All the above properties indicate the potential of SnS_2 nanosheets to be used as FETs and phototransistors. 2D SnS_2 nanosheets are exfoliated by micromechanical exfoliation technique from SnS_2 single crystals which are synthesized by CVT methods. Monolayer SnS_2 nanosheet has been obtained and the Raman spectrum shows that A_ (1g) mode of monolayer SnS_2 shows a slight softening compared with bulk SnS_2 single crystal The FETs based on multilayer SnS_2 nanosheets have been fabricated, of which the electrical and photoelectrical properties have been measured. With dark conditions, with V_ (sd) of 1 V, our SnS_2 FETs show n-type behavior. The carrier mobility of the FETs reaches 3.51 cm ~ 2V -1 s -1 and the 'ON / OFF' ratio is about 5 × 10 -2. The SnS 2 FETs are also illuminated under 532 nm laser with the power of 500 mW / cm ~ 2.The light absorption causes an increment of carrier mobility (from 3.51 cm ~ 2V ~ (-1) s ~ (-1) under dark condition to 3.85 cm ~ 2V ~ s ~ (-1) under 532 nm laser illumination with the power of 500 mW / cm ~ 2 / of SnS_2.The responsivity (R) and detectivity of our mult ilayer device under 500 mW / cm ~ 2532 nm is 2.08 A / W and 6 × 10 ~ 6 J, respectively. All of these above properties indicate the potential of SnS_2 nanosheets to be used as FETs and phototransistors.